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PIC12F683-E/MDQTP Datasheet(PDF) 121 Page - Microchip Technology |
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PIC12F683-E/MDQTP Datasheet(HTML) 121 Page - Microchip Technology |
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121 / 176 page  © 2007 Microchip Technology Inc. DS41211D-page 119 PIC12F683 15.3 DC Characteristics: PIC12F683-I (Industrial) DC CHARACTERISTICS Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +85°C for industrial Param No. Device Characteristics Min Typ† Max Units Conditions VDD Note D020 Power-down Base Current(IPD)(2) — 0.05 1.2 μA 2.0 WDT, BOR, Comparators, VREF and T1OSC disabled — 0.15 1.5 μA3.0 — 0.35 1.8 μA5.0 — 150 500 nA 3.0 -40°C ≤ TA ≤ +25°C D021 — 1.0 2.2 μA 2.0 WDT Current(1) —2.0 4.0 μA3.0 —3.0 7.0 μA5.0 D022 — 42 60 μA 3.0 BOR Current(1) — 85 122 μA5.0 D023 — 32 45 μA 2.0 Comparator Current(1), both comparators enabled —60 78 μA3.0 — 120 160 μA5.0 D024 — 30 36 μA2.0 CVREF Current(1) (high range) —45 55 μA3.0 —75 95 μA5.0 D025* — 39 47 μA2.0 CVREF Current(1) (low range) —59 72 μA3.0 — 98 124 μA5.0 D026 — 4.5 7.0 μA 2.0 T1OSC Current(1), 32.768 kHz —5.0 8.0 μA3.0 —6.0 12 μA5.0 D027 — 0.30 1.6 μA 3.0 A/D Current(1), no conversion in progress — 0.36 1.9 μA5.0 * These parameters are characterized but not tested. † Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this peripheral is enabled. The peripheral Δ current can be determined by subtracting the base IDD or IPD current from this limit. Max values should be used when calculating total current consumption. 2: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD. |
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