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PIC18F23K20-E/ML Datasheet(PDF) 372 Page - Microchip Technology

Part # PIC18F23K20-E/ML
Description  28/40/44-Pin Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology
PDF  420 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

PIC18F23K20-E/ML Datasheet(HTML) 372 Page - Microchip Technology

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PIC18F2XK20/4XK20
DS41303B-page 370
Advance Information
© 2007 Microchip Technology Inc.
26.10 Memory Programming Requirements
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C
≤ TA ≤ +125°C
Param
No.
Sym
Characteristic
Min
Typ†
Max
Units
Conditions
Internal Program Memory
Programming Specifications(1)
D110
VPP
Voltage on MCLR/VPP/RE3 pin
9.00
—
13.25
V
(Note 3)
D113
IDDP
Supply Current during
Programming
——
10
mA
Data EEPROM Memory
D120
ED
Byte Endurance
—
100K
—
E/W
-40
°C to +125°C
D121
VDRW
VDD for Read/Write
1.8
—
3.6
V
Using EECON to read/write
D122
TDEW
Erase/Write Cycle Time
—
4
—
ms
D123
TRETD Characteristic Retention
40
—
—
Year
Provided no other
specifications are violated
D124
TREF
Number of Total Erase/Write
Cycles before Refresh(2)
1M
10M
—
E/W
-40°C to +125°C
Program Flash Memory
D130
EP
Cell Endurance
—
10K
—
E/W
-40
°C to +125°C
D131
VPR
VDD for Read
1.8
—
3.6
V
D132
VIW
VDD for Row Erase or Write
1.8
—
3.6
V
D133
TIW
Self-timed Write Cycle Time
—
2
—
ms
D134
TRETD Characteristic Retention
40
—
—
Year
Provided no other
specifications are violated
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1:
These specifications are for programming the on-chip program memory through the use of table write
instructions.
2:
Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
3:
Required only if single-supply programming is disabled.



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