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PIC18F258-E/LSQTP Datasheet(PDF) 341 Page - Microchip Technology |
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PIC18F258-E/LSQTP Datasheet(HTML) 341 Page - Microchip Technology |
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341 / 402 page  © 2006 Microchip Technology Inc. DS41159E-page 339 PIC18FXX8 TABLE 27-2: DC CHARACTERISTICS: EEPROM AND ENHANCED FLASH DC Characteristics Standard Operating Conditions Param No. Sym Characteristic Min Typ† Max Units Conditions Internal Program Memory Programming Specifications D110 VPP Voltage on MCLR/VPP pin 9.00 — 13.25 V D113 IDDP Supply Current during Programming —— 10 mA Data EEPROM Memory D120 ED Cell Endurance 100K 1M — E/W -40°C to +85°C D120A ED Byte Endurance 10K 100K — E/W +85°C to +125°C D121 VDRW VDD for Read/Write VMIN — 5.5 V Using EECON to read/write VMIN = Minimum operating voltage D122 TDEW Erase/Write Cycle Time — 4 — ms D123 TRETD Characteristic Retention 40 — — Year Provided no other specifications are violated D124 TREF Number of Total Erase/Write Cycles to Data EEPROM before Refresh* 1M 10M — Cycles -40°C to +85°C D124A TREF Number of Total Erase/Write Cycles before Refresh* 100K 1M — Cycles +85°C to +125°C Program Flash Memory D130 EP Cell Endurance 10K 100K — E/W -40°C to +85°C D130A EP Cell Endurance 1000 10K — E/W +85°C to +125°C D131 VPR VDD for Read VMIN —5.5 V VMIN = Minimum operating voltage D132 VIE VDD for Block Erase 4.5 — 5.5 V Using ICSP™ port D132A VIW VDD for Externally Timed Erase or Write 4.5 — 5.5 V Using ICSP port D132B VPEW VDD for Self-Timed Write VMIN —5.5 V VMIN = Minimum operating voltage D133 TIE ICSP Erase Cycle Time — 4 — ms VDD ≥ 4.5V D133A TIW ICSP Erase or Write Cycle Time (externally timed) 1— — ms VDD ≥ 4.5V D133A TIW Self-Timed Write Cycle Time — 2 — ms D134 TRETD Characteristic Retention 40 — — Year Provided no other specifications are violated † Data in “Typ” column is at 5.0V, 25 °C unless otherwise stated. These parameters are for design guidance only and are not tested. * See Section 5.8 “Using the Data EEPROM” for more information. |
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