PC312XDP512F0CFVR datasheet(1177/1350 Pages) FREESCALE

1177 / 1350 page

Chapter 28 256 Kbyte Flash Module (S12XFTX256K2V1)

MC9S12XDP512 Data Sheet, Rev. 2.17

Freescale Semiconductor

1177

28.4.2.3

Program Command

The program operation will program a previously erased word in the Flash memory using an embedded

algorithm.

An example ﬂow to execute the program operation is shown in Figure 28-28. The program command write

sequence is as follows:

1. Write to a Flash block address to start the command write sequence for the program command. The

data written will be programmed to the address written. Multiple Flash blocks can be

simultaneously programmed by writing to the same relative address in each Flash block.

2. Write the program command, 0x20, to the FCMD register.

3. Clear the CBEIF ﬂag in the FSTAT register by writing a 1 to CBEIF to launch the program

command.

If a word to be programmed is in a protected area of the Flash block, the PVIOL ﬂag in the FSTAT register

will set and the program command will not launch. Once the program command has successfully launched,

the CCIF ﬂag in the FSTAT register will set after the program operation has completed unless a new

command write sequence has been buffered. By executing a new program command write sequence on

sequential words after the CBEIF ﬂag in the FSTAT register has been set, up to 55% faster programming

time per word can be effectively achieved than by waiting for the CCIF ﬂag to set after each program

operation.

PC312XDP512F0CFVR Datasheet(PDF) 1177 Page - Freescale Semiconductor, Inc