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STM32MP151AAA3T Datasheet(PDF) 149 Page - STMicroelectronics |
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STM32MP151AAA3T Datasheet(HTML) 149 Page - STMicroelectronics |
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149 / 245 page ![]() DS12500 Rev 1 149/245 STM32MP151A Electrical characteristics 228 Figure 19. Typical application with a 32.768 kHz crystal 1. An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one. 6.3.9 Internal clock source characteristics The parameters given in Table 33, Table 34 and Table 35 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 13: General operating conditions. 64 MHz high-speed internal RC oscillator (HSI) ai17531b OSC32_OU T OSC32_IN fLSE CL1 RF STM32 32.768 kH z resonator Resonator with integrated capacitors Bias controlled gain CL2 Table 33. HSI oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fHSI HSI frequency VDD = 3.3 V, TJ = 30 °C TBD 64 TBD MHz TRIM HSI user trimming step Trimming is not a multiple of 32 TBD 0.33 TBD % Trimming is 128, 256 and 384 TBD -2.43 TBD Trimming is 64, 192, 320 and 448 TBD -0.70 TBD Other trimming are a multiple of 32 (not including multiple of 64 and 128) TBD -0.30 TBD DuCy(HSI) Duty Cycle - 45 - 55 % ∆VDD (HSI) HSI oscillator frequency drift over VDD (reference is 3.3 V) VDD = 1.71 to 3.6 V -0.12 - 0.03 % ∆TEMP (HSI) HSI oscillator frequency drift over temperature (reference is 64 MHz) With Temperature Trimming TJ = -20 to 110 °C TBD - TBD % TJ = -40 to 125 °C -2.62 - 2.08 ∆TEMP_NOT RIM (HSI) HSI oscillator frequency drift over temperature (reference is 64 MHz) Without Temperature Trimming TJ = -20 to 110 °C TBD - TBD % T J =-40 to 125 °C -4 - 2.5 tsu(HSI) HSI oscillator start-up time (Time between Enable rising and First output clock edge.) - - 1.47 TBD µs tstab(HSI) HSI oscillator stabilization time at 1% of target frequency - 3 TBD µs IDD(HSI) HSI oscillator power consumption - - 300 TBD µA |
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