IS25LE128E-RJLE:P-TY datasheet(183/197 Pages) ISSI

183 / 197 page

IS25LE256E/128E

IS25WE256E/128E

Integrated Silicon Solution, Inc.- www.issi.com

183

Rev.A9

03/07/2023

9.4 DC CHARACTERISTICS

(Under operating range)

Symbol

Parameter

Condition

Min

Typ(2)

Max

Units

ICC1

VCC Active Read current

(3)

NORD at 80MHz

FRD Single at 166MHz (7)

FRD Dual at 166MHz (7)

FRD Quad at 166MHz (7)

FRD Single at 133MHz

FRD Dual at 133MHz

FRD Quad at 133MHz

FRD Quad at 83MHz

FRD Quad at 104MHz

FRD Single DTR at 80MHz

FRD Dual DTR at 80MHz

FRD Quad DTR at 80MHz

ICC2

VCC Program Current

CE# = VCC

85°C

105°C

125°C

ICC3

VCC WRSR Current

CE# = VCC

85°C

105°C

125°C

ICC4

VCC Erase Current

(SER/4SER/BER32/4BER32/

BER64/4BER64)

CE# = VCC

85°C

105°C

125°C

ICC5

VCC Erase Current (CE)

CE# = VCC

85°C

105°C

125°C

ISB1

VCC Standby

Current CMOS

IS25LE

CE# = VCC,

VIN = GND or VCC

(4)

85°C

60 (6)

µA

105°C

90(6)

125°C

140

IS25WE

85°C

60 (6)

105°C

90 (6)

125°C

140

ISB2

Deep power down

current

IS25LE

CE# = VCC,

VIN = GND or VCC

(4)

85°C

7.5

20 (6)

µA

105°C

30(6)

125°C

IS25WE

85°C

20 (6)

105°C

30 (6)

125°C

ILI

Input Leakage Current

VIN = 0V to VCC

±1(5)

µA

ILO

Output Leakage Current

VIN = 0V to VCC

±1(5)

µA

VIL(1)

Input Low Voltage

-0.5

0.3VCC

VIH(1)

Input High Voltage

0.7VCC

VCC + 0.3

VOL

Output Low Voltage

IOL = 100 µA

0.2

VOH

Output High Voltage

IOH = -100 µA

VCC - 0.2

IS25LE128E-RJLE:P-TY Datasheet(PDF) 183 Page - Integrated Silicon Solution, Inc

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