IS25LE128E-RGLA3:P-TY datasheet(186/197 Pages) ISSI

186 / 197 page

IS25LE256E/128E

IS25WE256E/128E

Integrated Silicon Solution, Inc.- www.issi.com

186

Rev.A9

03/07/2023

Symbol

Parameter

Min

Typ(2)

Max

Units

tLZ(1)

HOLD to Output Low Z

tHZ(1)

HOLD to Output High Z

tEC

Sector Erase Time (4Kbyte)

100

300

Block Erase Time (32Kbyte)

0.14

0.5

Block Erase time (64Kbyte)

0.17

1.0

Block Erase time (256Kbyte)

0.68

4.0

Chip Erase Time

128Mb

256Mb

180

tPP

Page Program Time

256byte

0.3

1.0

512byte

0.6

2.0

tRES1(1)

Release deep power down

IS25LE

µs

IS25WE

tDP(1)

Deep power down

µs

Write Status Register time

tSUS(1)

Suspend to read ready

100

µs

tRS(1)

Resume to next suspend

µs

tSRST(1)

Software Reset recovery time

µs

tRESET(1)

RESET# pin low pulse width

100

tHWRST(1)

Hardware Reset recovery time

µs

Notes:

1. These parameters are characterized and not 100% tested.

2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC

= VCC (Typ), TA=25°C.

3. Only applicable as a constraint for a WRITE STATUS REGISTER command when SRWD is set at 1.

4. Values are guaranteed by characterization and not 100% tested in production.

5. 166MHz at - 40°C to 105°C, 133MHz at - 40°C to 125°C

6. RDSR(05h), RDID(ABh), RDJDID(9Fh), RDJDIDQ(AFh, QPI mode only), RDRP(61h), RDFR(48h) operation frequency

for 1.8V device is like below:

SPI Mode

QPI Mode

125°C, 1.7V~1.95V

133MHz

104MHz

105°C, 1.7V~1.95V

166MHz

133MHz

IS25LE128E-RGLA3:P-TY Datasheet(PDF) 186 Page - Integrated Silicon Solution, Inc

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