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STM32H533CE Datasheet(PDF) 195 Page - STMicroelectronics

Part # STM32H533CE
Description  Arm® Cortex®-M33 32-bit MCUTrustZone® FPU, 375 DMIPS 250 MHz, 512-Kbyte flash, 272-Kbyte RAM, cryptography
PDF  231 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32H533CE Datasheet(HTML) 195 Page - STMicroelectronics

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DS14539 Rev 1
195/231
STM32H533xx
Electrical characteristics
200
Figure 54. USB timings - definition of data signal rise and fall time
4. RL is the load connected on the USB full speed drivers.
Table 113. USB startup time
Symbol
Parameter
Max
Unit
tSTARTUP(1)
1. Specified by design - Not tested in production.
USB transceiver startup time
1
μs
ai14137b
Cross over
points
Differential
data lines
VCRS
VSS
tf
tr
Table 114. USB electrical characteristics(1)
Driver characteristics
Symbol
Parameter
Conditions
Min
Max
Unit
trLS
Rise time in LS(2)
CL = 200 to 600 pF
75
300
ns
tfLS
Fall time in LS(2)
CL = 200 to 600 pF
75
300
ns
trfmLS
Rise/fall time matching in LS
tr/tf
80
125
%
trFS
Rise time in FS(2)
CL = 50 pF
4
20
ns
tfFS
Fall time in FS(2)
CL = 50 pF
4
20
ns
trfmFS
Rise/fall time matching in FS
tr/tf
90
111
%
VCRS
Output signal crossover voltage (LS/FS)
-
1.3
2.0
V
ZDRV
Output driver impedance(3)
Driving high or low
28
44
Ω
1. Specified by design - Not tested in production.
2. Measured from 10% to 90% of the data signal. For more detailed information, refer to USB specification -
chapter 7 (version 2.0).
3. No external termination series resistors are required on DP (D+) and DM (D-) pins since the matching
impedance is included in the embedded driver.
Table 115. USB BCD DC electrical characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IDD(USBBCD)
Primary detection mode consumption
-
-
-
300
μA
Secondary detection mode consumption
-
-
-
300
RDAT_LKG
Data line leakage resistance
-
300
-
-
kΩ
VDAT_LKG
Data line leakage voltage
-
0.0
-
3.6
V



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