R8C2K datasheet(423/471 Pages) RENESAS

423 / 471 page

R8C/2K Group, R8C/2L Group

22. Electrical Characteristics

Rev.1.10

Dec 21, 2007

Page 406 of 450

REJ09B0406-0110

NOTES:

VCC = 2.7 to 5.5 V at Topr =

−20 to 85°C (N version) / −40 to 85°C (D version), unless otherwise specified.

Definition of programming/erasure endurance

The programming and erasure endurance is defined on a per-block basis.

If the programming and erasure endurance is n (n = 100 or 10,000), each block can be erased n times. For example, if 1,024

1-byte writes are performed to block A, a 1 Kbyte block, and then the block is erased, the programming/erasure endurance

still stands at one.

However, the same address must not be programmed more than once per erase operation (overwriting prohibited).

Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).

Standard of block A and block B when program and erase endurance exceeds 1,000 times. Byte program time to 1,000 times

is the same as that in program ROM.

In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential

addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,

when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups

before erasing them all in one operation. It is also advisable to retain data on the erase count of each block and limit the

number of erase operations to a certain number.

If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase

command at least three times until the erase error does not occur.

Customers desiring program/erase failure rate information should contact their Renesas technical support representative.

−40°C for D version.

The data hold time includes time that the power supply is off or the clock is not supplied.

Table 22.5

Flash Memory (Data flash Block A, Block B) Electrical Characteristics(4)

Symbol

Parameter

Conditions

Standard

Unit

Min.

Typ.

Max.

−

Program/erase endurance(2)

10,000(3)

−−

times

−

Byte program time

(program/erase endurance

≤ 1,000 times)

−

400

µs

−

Byte program time

(program/erase endurance

> 1,000 times)

−

−µs

−

Block erase time

(program/erase endurance

≤ 1,000 times)

−

0.2

−

Block erase time

(program/erase endurance

> 1,000 times)

−

0.3

−

td(SR-SUS)

Time delay from suspend request until

suspend

−−

97+CPU clock

× 6 cycles

µs

−

Interval from erase start/restart until

following suspend request

650

−−

µs

−

Interval from program start/restart until

following suspend request

−−

−

Time from suspend until program/erase

restart

−−

3+CPU clock

× 4 cycles

µs

−

Program, erase voltage

2.7

−

5.5

−

Read voltage

2.2

−

5.5

−

Program, erase temperature

−20(8)

−

°C

−

Data hold time(9)

Ambient temperature = 55

°C20

−−

year

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