M16CSLASH29 datasheet(494/499 Pages) RENESAS

494 / 499 page

REVISION HISTORY

M16C/29 Hardware Manual

Rev.

Date

Description

Page

Summary

C-12

388

• Table 21.41 Recommended Operating Conditions VIH and VIL are modified

389

• Table 21.42 A/D Conversion Characeristics tSAMP deleted, note 4 added

390

• Table 21.43 Flash Memory Version Electrical Characteristics: Standard val-

ues of Program and Erase Endrance cycle modified, tps added

• Table 21.44 Flash Memory Version Electrical Characteristics: tps added,

data hold time added, note 1, 3, 8 modified, note 11 and 12 added

391

• Table 21.45 Power Supply Circuit from Timing CharacteristicsL Note 2 & 3

are deleted, td(S-R) and td(E-A) are deleted, figure modified

393

• Table 21.47 Electrical Characteristics(2) Note 4 is added

401

• Table 21.63 Electrical Characteristics(2) Note 4 is added

Precautions

422

• 22.2.1 PLL Frequency Synthesizer modified

423

• 22.2.2 Power Control Subsection sequence modified, 2., 3. and 4. information

modified

425

______

• 22.4.3 NMI Interrupt 2. information partially deleted, 6. information added

426

______

• 22.4.5 INT Interrupt 3. information added

427

• 22.4.6 Rewrite the Interrupt Control Register Example 1 is modified

431

• 22.6.1.3 Timer A (One-shot Timer Mode) 6. information added

434

• 22.6.3 Three-phase Motor Control Timer Function newly added

435

• 22.7.1 Rewrite the G1 IR Register description modified

• Figure 22.3 IC/OC Interrupt Flow Chart newly added

436

• 22.7.2 Rewrite the ICOCiIC Register newly added

• 22.7.3 Waveform Generating Function newly added

• 22.7.4 IC/OC Base Timer Interrupt newly added

438

• 22.8.2.1 Special Mode (I2C bus Mode) added

• 22.8.2.3 SI/O3, SI/O4 added

441

• 22.10 Multi-master I2C bus Interface added

445

• 22.12 Programmable I/O Ports 2. and 3. information modified

447

• 20.14 Mask ROM Version is added

448

• 22.15.1 Functions to Inhibit Rewriting Flash Memory Rewrite modified

• 22.15.2 Stop Mode modified

• 22.16.4 Low Power Disspation Mode, On-chip Oscillator Low Power Dissi-

pation Mode

modified

• 22.15.7 Operating Speed modified

449

• 22.15.9 Interrupts modified

• 22.15.13 Regarding Programming/Erasure Times and Execution Time

modified

450

• 22.15.14 Definition of Programming/Erasure Times added

• 22.15.15 Flash Memory version Electrical Characteristics 10,000 E/W cycle

M16C/29 Datasheet(PDF) 494 Page - Renesas Technology Corp

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