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H8S2245 Datasheet(PDF) 615 Page - Renesas Technology Corp |
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H8S2245 Datasheet(HTML) 615 Page - Renesas Technology Corp |
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615 / 818 page ![]() Section 19 Electrical Characteristics Rev.3.00 Mar. 26, 2007 Page 573 of 772 REJ09B0355-0300 Item Symbol Min Typ Max Unit Test Conditions Three-state leakage current (off state) Ports 1 to 3, 5, A to G I TSI —— 1.0 µAV in = 0.5 to V CC –0.5 V Input pull-up MOS current Ports A to E –I P 50 — 300 µAV in = 0 V RES C in —— 80 pF NMI —— 50 pF Input capacitance All input pins except RES and NMI —— 15 pF V in = 0 V, f = 1 MHz, T a = 25°C Current dissipation* 2 Normal operation I CC* 4 — 50 (5.0 V) 75 (5.5 V) mA f = 20 MHz Sleep mode — 35 (5.0 V) 55 (5.5 V) mA f = 20 MHz All module stop mode — 35 (5.0 V) — mA Reference value f = 20 MHz Medium speed ( φ/32) mode — 25 (5.0 V) — mA Reference value f = 20 MHz Sleep, all module stop and medium speed ( φ/32) mode — 5.0 (5.0 V) 10 (5.5 V) mA f = 20 MHz — 0.01 5.0 T a ≤ 50°C Standby mode* 3 —— 20.0 µA 50°C < T a Analog power supply current During A/D conversion Al CC — 1.2 2.0 mA Idle — 0.01 5.0 µA Reference current During A/D conversion Al CC — 0.5 0.8 mA V ref = 5.0 V Idle — 0.01 5.0 µA RAM standby voltage V RAM 2.0 —— V |
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