HD6432351 datasheet(737/1025 Pages) RENESAS

737 / 1025 page

Section 21 Electrical Characteristics

Rev. 3.00 Sep 15, 2006 page 703 of 988

REJ09B0330-0300

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Three-state

leakage

current

(off state)

Ports 1 to 3,

5, 6, A to G

I TSI

—

1.0

µA

Vin =

0.5 to VCC –0.5 V

MOS input

pull-up

current*

Ports A to E

–I P

—

300

µA

Vin = 0 V

RES

Cin

—

NMI

—

Input

capacitance

All input pins

except

RES

and NMI

—

Vin = 0 V,

f = 1 MHz,

Ta = 25°C

Current

dissipation*

Normal

operation

I CC*

—

(5.0 V)

f = 20 MHz

Sleep mode

—

(5.0 V)

f = 20 MHz

—

0.01

5.0

µA

≤ 50°C

Standby

mode*

—

50°C < Ta

Analog power

supply current

During A/D

and D/A

conversion

Al CC

—

0.8

(5.0 V)

2.0

Idle

—

0.01

5.0

µA

Reference

current

During A/D

and D/A

conversion

Al CC

—

1.9

(5.0 V)

3.0

Idle

—

0.01

5.0

µA

RAM standby voltage

VRAM

2.0

—

Notes: 1. If the A/D and D/A converters are not used, do not leave the AVCC, AVSS, and Vref

pins open.

Connect AVCC and Vref to VCC, and connect AVSS to VSS.

2. Current dissipation values are for VIH min = VCC –0.5 V and VIL max = 0.5 V with all

output pins unloaded and the on-chip pull-up transistors in the off state.

3. The values are for VRAM

≤ VCC < 4.5V, VIH min = VCC × 0.9, and VIL max = 0.3 V.

4. I CC depends on VCC and f as follows:

I CC max = 1.0 (mA) + 0.85 (mA/(MHz

× V)) × VCC × f [normal mode]

I CC max = 1.0 (mA) + 0.7 (mA/(MHz

× V)) × VCC × f [sleep mode]

5. Only applies to the H8S/2351.

HD6432351 Datasheet(PDF) 737 Page - Renesas Technology Corp

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