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AT89C5131A-RDTIL Datasheet(PDF) 172 Page - ATMEL Corporation |
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AT89C5131A-RDTIL Datasheet(HTML) 172 Page - ATMEL Corporation |
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172 / 186 page  172 AT89C5131A-L 4338F–USB–08/07 Flash EEPROM Memory and Data EEPROM Memory Table 124. Timing Symbol Definitions Table 125. Memory AC Timing VDD = 3.3V ± 10%, TA = -40 to +85°C Figure 82. Flash Memory - ISP Waveforms Figure 83. Flash Memory - Internal Busy Waveforms Signals Conditions S (Hardware Condition) PSEN, EA L Low R RST V Valid B FBUSY Flag X No Longer Valid Symbol Parameter Min Typ Max Unit T SVRL Input PSEN Valid to RST Edge 50 ns T RLSX Input PSEN Hold after RST Edge 50 ns T BHBL Flash EEPROM Internal Busy (Programming) Time 10 20 ms T BHBL EEPROM Data Internal Busy (Programming) Time 10 20 ms Flash EEPROM program memory write cycles 100K Cycles Configuration bits (fuses bits) memory write cycles (BLJB, X2, OSCON0, OSCON1) 1K Cycles EEPROM Data memory write cycles 100K Cycles RST T SVRL PSEN1 T RLSX FBUSY bit T BHBL |
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