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PIC18F23K20-E/ML Datasheet(PDF) 380 Page - Microchip Technology |
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PIC18F23K20-E/ML Datasheet(HTML) 380 Page - Microchip Technology |
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380 / 456 page ![]() PIC18F2XK20/4XK20 DS41303G-page 380 2010 Microchip Technology Inc. 26.10 Memory Programming Requirements DC CHARACTERISTICS Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C TA +125°C Param No. Sym Characteristic Min Typ† Max Units Conditions Internal Program Memory Programming Specifications(1) D110 VPP Voltage on MCLR/VPP/RE3 pin VDD + 4.5 — 9 V (Note 3, Note 4) D113 IDDP Supply Current during Programming —— 10 mA Data EEPROM Memory D120 ED Byte Endurance 100K — — E/W -40 C to +85C D121 VDRW VDD for Read/Write 1.8 — 3.6 V Using EECON to read/write D122 TDEW Erase/Write Cycle Time — 4 — ms D123 TRETD Characteristic Retention 40 — — Year Provided no other specifications are violated D124 TREF Number of Total Erase/Write Cycles before Refresh(2) 1M 10M — E/W -40°C to +85°C Program Flash Memory D130 EP Cell Endurance 10K — — E/W -40 C to +85C (NOTE 5) D131 VPR VDD for Read 1.8 — 3.6 V D132 VIW VDD for Row Erase or Write 2.2 — 3.6 V D133 TIW Self-timed Write Cycle Time — 2 — ms D134 TRETD Characteristic Retention 40 — — Year Provided no other specifications are violated † Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: These specifications are for programming the on-chip program memory through the use of table write instructions. 2: Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM endurance. 3: Required only if single-supply programming is disabled. 4: The MPLAB ICD 2 does not support variable VPP output. Circuitry to limit the ICD 2 VPP voltage must be placed between the ICD 2 and target system when programming or debugging with the ICD 2. 5: Self-write and Block Erase. |
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