PIC18F23K22-ESLASHML datasheet(438/492 Pages) MICROCHIP

438 / 492 page

PIC18(L)F2X/4XK22

DS41412B-page 438

Preliminary

 2010 Microchip Technology Inc.

27.9

Memory Programming Requirements

DC CHARACTERISTICS

Standard Operating Conditions (unless otherwise stated)

Operating temperature -40°C

 TA  +125°C

Param

No.

Sym

Characteristic

Min

Typ†

Max

Units

Conditions

Internal Program Memory

Programming Specifications(1)

D170

VPP

Voltage on MCLR/VPP/RE3 pin

VDD + 4.5

—

(Note 3), (Note 4)

D171

IDDP

Supply Current during

Programming

——

Data EEPROM Memory

D172

Byte Endurance

100K

—

E/W

-40

C to +85C

D173

VDRW

VDD for Read/Write (PIC18LF)

1.8

—

3.6

Using EECON to

read/write

D174

VDRW

VDD for Read/Write (PIC18F)

1.8

—

5.5

D175

TDEW

Erase/Write Cycle Time

—

D176

TRETD Characteristic Retention

—

Year Provided no other

specifications are violated

D177

TREF

Number of Total Erase/Write

Cycles before Refresh(2)

10M

—

E/W

-40°C to +85°C

Program Flash Memory

D178

Cell Endurance

10K

—

E/W

-40

C to +85C (Note 5)

D179

VPR

VDD for Read (PIC18LF)

1.8

—

3.6

D180

VPR

VDD for Read (PIC18F)

1.8

—

5.5

D181

VIW

VDD for Row Erase or Write

(PIC18LF)

2.2

—

3.6

D182

VIW

VDD for Row Erase or Write

(PIC18F)

2.2

—

5.5

D183

TIW

Self-timed Write Cycle Time

—

D184

TRETD Characteristic Retention

—

Year Provided no other

specifications are violated

† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance

only and are not tested.

Note 1:

These specifications are for programming the on-chip program memory through the use of table write instruc-

tions.

Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM

endurance.

Required only if single-supply programming is disabled.

The MPLAB ICD 2 does not support variable VPP output. Circuitry to limit the ICD 2 VPP voltage must be

placed between the ICD 2 and target system when programming or debugging with the ICD 2.

Self-write and Block Erase.

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