PC312XDP512F0CFVR datasheet(1071/1348 Pages) FREESCALE

1071 / 1348 page

MC9S12XDP512 Data Sheet, Rev. 2.21

Freescale Semiconductor

1073

Chapter 26

4 Kbyte EEPROM Module (S12XEETX4KV2)

26.1

Introduction

This document describes the EETX4K module which includes a 4 Kbyte EEPROM (nonvolatile) memory.

The EEPROM memory may be read as either bytes, aligned words, or misaligned words. Read access time

is one bus cycle for bytes and aligned words, and two bus cycles for misaligned words.

The EEPROM memory is ideal for data storage for single-supply applications allowing for ﬁeld

reprogramming without requiring external voltage sources for program or erase. Program and erase

functions are controlled by a command driven interface. The EEPROM module supports both block erase

(all memory bytes) and sector erase (4 memory bytes). An erased bit reads 1 and a programmed bit reads

0. The high voltage required to program and erase the EEPROM memory is generated internally. It is not

possible to read from the EEPROM block while it is being erased or programmed.

CAUTION

An EEPROM word (2 bytes) must be in the erased state before being

programmed. Cumulative programming of bits within a word is not allowed.

26.1.1

Glossary

Command Write Sequence — A three-step MCU instruction sequence to execute built-in algorithms

(including program and erase) on the EEPROM memory.

26.1.2

Features

•

4 Kbytes of EEPROM memory divided into 1024 sectors of 4 bytes

•

Automated program and erase algorithm

•

Interrupts on EEPROM command completion and command buffer empty

•

Fast sector erase and word program operation

•

2-stage command pipeline

•

Sector erase abort feature for critical interrupt response

•

Flexible protection scheme to prevent accidental program or erase

•

Single power supply for all EEPROM operations including program and erase

26.1.3

Modes of Operation

Program, erase and erase verify operations (please refer to Section 26.4.1, “EEPROM Command

Operations” for details).

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