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PC312XDP512F0CFVR Datasheet(PDF) 1091 Page - Freescale Semiconductor, Inc |
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PC312XDP512F0CFVR Datasheet(HTML) 1091 Page - Freescale Semiconductor, Inc |
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1091 / 1348 page  Chapter 26 4 Kbyte EEPROM Module (S12XEETX4KV2) MC9S12XDP512 Data Sheet, Rev. 2.21 Freescale Semiconductor 1093 26.4.2.2 Program Command The program operation will program a previously erased word in the EEPROM memory using an embedded algorithm. An example flow to execute the program operation is shown in Figure 26-19. The program command write sequence is as follows: 1. Write to an EEPROM block address to start the command write sequence for the program command. The data written will be programmed to the address written. 2. Write the program command, 0x20, to the ECMD register. 3. Clear the CBEIF flag in the ESTAT register by writing a 1 to CBEIF to launch the program command. If a word to be programmed is in a protected area of the EEPROM memory, the PVIOL flag in the ESTAT register will set and the program command will not launch. Once the program command has successfully launched, the CCIF flag in the ESTAT register will set after the program operation has completed unless a new command write sequence has been buffered. |
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