2N3904 datasheet(1/4 Pages) KODENSHI

Part #	2N3904

Description	NPN Silicon Transistor

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Manufacturer	KODENSHI [KODENSHI_AUK CORP.]

Direct Link	http://www.kodenshi.co.kr

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KSD-T0A033-000

1

2N3904

NPN Silicon Transistor

PIN Connection

C

B

E

TO-92

Descriptions

• General small signal application

• Switching application

Features

• Low collector saturation voltage

• Collector output capacitance

• Complementary pair with 2N3906

Ordering Information

Type NO.

Marking

Package Code

2N3904

TO-92

Absolute maximum ratings

Ta=25

°C

Characteristic

Symbol

Ratings

Unit

Collector-Base voltage

VCBO

60

V

Collector-Emitter voltage

VCEO

40

V

Emitter-base voltage

VEBO

6

V

Collector current

IC

200

mA

Collector dissipation

PC

625

mW

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

-55~150

°C

Electrical Characteristics

Ta=25

°C

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Collector-Base breakdown voltage

BVCBO

IC=10μA, IE=0

60

-

V

Collector-Emitter breakdown voltage

BVCEO

IC=1mA, IB=0

40

-

V

Emitter-Base breakdown voltage

BVEBO

IE=10μA, IC=0

6

-

V

Collector cut-off current

ICEX

VCE=30V, VEB=3V

-

50

nA

DC current gain

hFE

VCE=1V, IC=10mA

100

-

300

-

Collector-Emitter saturation voltage

VCE(sat)

IC=50mA, IB=5mA

-

0.3

V

Transition frequency

fT

VCE=20V, IC=10mA,

f=100MHz

300

-

MHz

Collector output capacitance

Cob

VCB=5V, IE=0, f=1MHz

-

4

pF

Delay time

td

-

35

ns

Rise time

tr

VCC=3Vdc, VBE(off)=0.5Vdc.

IC=10mAdc, IB1=1mAdc

-

35

ns

Storage time

ts

-

200

ns

Fall Time

tf

VCC=3Vdc,IC=10mAdc,

IB1=IB2=1mAdc

-

50

ns

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