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SPC56EL60L5 Datasheet(PDF) 120 Page - STMicroelectronics |
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SPC56EL60L5 Datasheet(HTML) 120 Page - STMicroelectronics |
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120 / 160 page  Electrical characteristics SPC56XL60/54 120/160 Doc ID 15457 Rev 8 3.16 Flash memory electrical characteristics IS1WINJ (single ADC channel) Max leakage 150C — — 250 nA Max positive/negative injection –3 — 3 mA IS1WWINJ (double ADC channel) Max leakage 150C — — 300 nA Max positive/negative injection |Vref_ad0 - Vref_ad1| < 150mV –3.6 — 3.6 mA SNR T Signal-to-noise ratio Vref = 3.3V 67 — — dB SNR T Signal-to-noise ratio Vref = 5.0V 69 — — dB THD T Total harmonic distortion — -65 — — dB SINAD T Signal-to-noise and distortion — 65 — — dB ENOB T Effective number of bits — 10.5 — — bits TUEIS1WINJ T Total unadjusted error for IS1WINJ (single ADC channels) Without current injection –6 — 6 LSB With current injection –8 — 8 LSB TUEIS1WWINJ P Total unadjusted error for IS1WWINJ (double ADC channels) Without current injection –8 — 8 LSB T With current injection –10 — 10 LSB 1. VDD = 3.3 V, TJ = –40 to +150 °C, unless otherwise specified and analog input voltage from VAGND to VAREF. 2. AD_CK clock is always half of the ADC module input clock defined via the auxiliary clock divider for the ADC. 3. This is the maximum frequency that the analog portion of the ADC can attain. A sustained conversion at this frequency is not possible. 4. During the sample time the input capacitance CS can be charged/discharged by the external source. The internal resistance of the analog source must allow the capacitance to reach its final voltage level within tsample. After the end of the sample time tsample, changes of the analog input voltage have no effect on the conversion result. Values for the sample clock tsample depend on programming. 5. This parameter does not include the sample time tsample, but only the time for determining the digital result and the time to load the result register with the conversion result. 6. See Figure 9. 7. For the 144-pin package 8. No missing codes Table 26. ADC conversion characteristics (continued) Symbol Parameter Conditions(1) Min Typ Max Unit Table 27. Flash memory program and erase electrical specifications No. Symbol Parameter Typ (1) Factory Avg Initial Max (2) Lifetime Max(3) Unit 1TDWPROGRAM *(4) Double word (64 bits) program time(4) 38 — — 500 µs 2TPPROGRAM *(5) Page(128 bits) program time(5) 45 53 160 500 µs 3T16KPPERASE *(5) 16 KB block pre-program and erase time 270 1000 500 5000 ms 4T48KPPERASE *(5) 48 KB block pre-program and erase time 625 1500 750 5000 ms |
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