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ST10F276E Datasheet(PDF) 196 Page - STMicroelectronics

Part # ST10F276E
Description  16-bit MCU with MAC unit 832 Kbyte Flash memory and 68 Kbyte RAM
PDF  235 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ST10F276E Datasheet(HTML) 196 Page - STMicroelectronics

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Electrical characteristics
ST10F276E
196/235
Doc ID 12303 Rev 3
1.
Supposing to design the filter with the pole exactly at the maximum frequency of the
signal, the time constant of the filter is:
2.
Using the relation between CF and CS and taking some margin (4000 instead of 2048),
it is possible to define CF:
3.
As a consequence of Step 1 and 2, RC can be chosen:
4.
Considering the current injection limitation and supposing that the source can go up to
12V, the total series resistance can be defined as:
5.
from which is now simple to define the value of RL:
Now, the three elements of the external circuit RF, CF and RL are defined. Some conditions
discussed in the previous paragraphs have been used to size the component; the others
must now be verified. The relation which allows to minimize the accuracy error introduced by
the switched capacitance equivalent resistance is in this case:
So the error due to the voltage partitioning between the real resistive path and CS is less
then half a count (considering the worst case when VA = 5V):
The other conditions to verify are if the time constants of the transients are really and
significantly shorter than the sampling period duration TS:
For a complete set of parameters characterizing the ST10F276E A/D converter equivalent
circuit, refer to Table 93: A/D converter characteristics on page 187.
R
C
C
F
1
2
πf
0
------------
15.9
μs
=
=
C
F
4000C
S
⋅
16nF
=
=
R
F
1
2
πf
0
C
F
--------------------
995
Ω 1kΩ
≅
=
=
R
S
R
F
R
L
V
AM
I
INJ
-------------
4k
Ω
=
=
++
R
L
V
AM
I
INJ
-------------
R
F
R
S
2.9k
Ω
=
–
–
=
R
EQ
1
f
C
C
S
---------------
10M
Ω
=
=
V
A
R
S
R
F
R
L
R
SW
R
AD
++
+
+
R
EQ
-------------------------------------------------------------------------
2.35mV
=
⋅
1
2
--- LSB
<
τ
1
R
SW
R
AD
+
()
=
C
S
2.8ns
=
⋅
<< TS = 1μs
10
τ
2
⋅
10R
⋅
L
=
C
S
C
P1
C
P2
++
() 290ns
=
⋅
< TS = 1μs



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