STM32F415RG datasheet(113/186 Pages) STMICROELECTRONICS

113 / 186 page

DocID022063 Rev 4

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STM32F415xx, STM32F417xx

Electrical characteristics

Unless otherwise specified, the parameters given in Table 49 are derived from tests

performed under the ambient temperature and VDD supply voltage conditions summarized

in Table 14.

Table 49. I/O AC characteristics(1)(2)(3)

OSPEEDRy

[1:0] bit

value(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fmax(IO)out Maximum frequency(4)

CL = 50 pF, VDD > 2.70 V

MHz

CL = 50 pF, VDD > 1.8 V

CL = 10 pF, VDD > 2.70 V

TBD

CL = 10 pF, VDD > 1.8 V

TBD

tf(IO)out

Output high to low level fall

time

CL = 50 pF, VDD = 1.8 V to

3.6 V

TBD

tr(IO)out

Output low to high level rise

time

TBD

fmax(IO)out Maximum frequency(4)

CL = 50 pF, VDD > 2.70 V

MHz

CL = 50 pF, VDD > 1.8 V

12.5(5)

CL = 10 pF, VDD > 2.70 V

50(5)

CL = 10 pF, VDD > 1.8 V

TBD

tf(IO)out

Output high to low level fall

time

CL = 50 pF, VDD < 2.7 V

TBD

CL = 10 pF, VDD > 2.7 V

TBD

tr(IO)out

Output low to high level rise

time

CL = 50 pF, VDD < 2.7 V

TBD

CL = 10 pF, VDD > 2.7 V

TBD

fmax(IO)out Maximum frequency(4)

CL = 40 pF, VDD > 2.70 V

50(5)

MHz

CL = 40 pF, VDD > 1.8 V

CL = 10 pF, VDD > 2.70 V

100(5)

CL = 10 pF, VDD > 1.8 V

TBD

tf(IO)out

Output high to low level fall

time

CL = 50 pF,

2.4 < VDD < 2.7 V

TBD

CL = 10 pF, VDD > 2.7 V

TBD

tr(IO)out

Output low to high level rise

time

CL = 50 pF,

2.4 < VDD < 2.7 V

TBD

CL = 10 pF, VDD > 2.7 V

TBD

STM32F415RG Datasheet(PDF) 113 Page - STMicroelectronics

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