PIC16F882-I datasheet(254/328 Pages) MICROCHIP

254 / 328 page

PIC16F882/883/884/886/887

DS41291F-page 252

D100

IULP

Ultra Low-Power Wake-Up

Current

—

200

—

See Application Note AN879,

“Using the Microchip Ultra

Low-Power Wake-up Module”

(DS00879)

Capacitive Loading Specs on

Output Pins

D101*

COSC2

OSC2 pin

—

In XT, HS and LP modes when

external clock is used to drive

OSC1

D101A* CIO

All I/O pins

—

Data EEPROM Memory

D120

Byte Endurance

100K

—

E/W

-40°C

≤ TA ≤ +85°C

D120A

Byte Endurance

10K

100K

—

E/W

+85°C

≤ TA ≤ +125°C

D121

VDRW

VDD for Read/Write

VMIN

—

5.5

Using EECON1 to read/write

VMIN = Minimum operating

voltage

D122

TDEW

Erase/Write Cycle Time

—

D123

TRETD

Characteristic Retention

—

Year

Provided no other specifications

are violated

D124

TREF

Number of Total Erase/Write

Cycles before Refresh(4)

10M

—

E/W

-40°C

≤ TA ≤ +85°C

Program Flash Memory

D130

Cell Endurance

10K

100K

—

E/W

-40°C

≤ TA ≤ +85°C

D130A

Cell Endurance

10K

—

E/W

+85°C

≤ TA ≤ +125°C

D131

VPR

VDD for Read

VMIN

—5.5

VMIN = Minimum operating

voltage

D132

VPEW

VDD for Row Erase/Write

VMIN

—5.5

VDD for Bulk Erase Operations

4.5

—

5.5

D133

TPEW

Erase/Write cycle time

—

2.5

D134

TRETD

Characteristic Retention

—

Year

Provided no other specifications

are violated

17.5

DC Characteristics:

PIC16F883/884/886/887-I (Industrial)

PIC16F883/884/886/887-E (Extended) (Continued)

DC CHARACTERISTICS

Standard Operating Conditions (unless otherwise stated)

Operating temperature

-40°C

≤ TA ≤ +85°C for industrial

-40°C

≤ TA ≤ +125°C for extended

Param

No.

Sym.

Characteristic

Min.

Typ†

Max.

Units

Conditions

These parameters are characterized but not tested.

†

Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are

not tested.

Note

In RC oscillator configuration, the OSC1/CLKIN pin is a Schmitt Trigger input. It is not recommended to use an external

clock in RC mode.

Negative current is defined as current sourced by the pin.

The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels represent

normal operating conditions. Higher leakage current may be measured at different input voltages.

See Section 10.3.1 “Using the Data EEPROM” for additional information.

Including OSC2 in CLKOUT mode.

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