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ST10F273Z4 Datasheet(PDF) 154 Page - STMicroelectronics |
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ST10F273Z4 Datasheet(HTML) 154 Page - STMicroelectronics |
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154 / 188 page  Electrical characteristics ST10F273Z4 154/188 The given values of CA do not include the stray capacitance of the package and of the printed circuit board: the negative resistance values are calculated assuming additional 5pF to the values in the table. The crystal shunt capacitance (C0), the package and the stray capacitance between XTAL1 and XTAL2 pins is globally assumed equal to 4pF. The external resistance between XTAL1 and XTAL2 is not necessary, since already present on the silicon. 24.8.12 32 kHz oscillator specifications VDD = 5V ± 10%, VSS = 0V, TA = –40 °C to +125 °C Figure 46. 32 kHz crystal oscillator connection diagram Table 74. Main oscillator negative resistance (module) CA = 12 pF 15 pF 18 pF 22 pF 27 pF 33 pF 39 pF 47 pF 4 MHz 460 Ω 550 Ω 675 Ω 800 Ω 840 Ω 1000 Ω 1180 Ω 1200 Ω 8 MHz 380 Ω 460 Ω 540 Ω 640 Ω 580 Ω -- - 12 MHz 370 Ω 420 Ω 360 Ω -- -- - Table 75. 32 kHz oscillator characteristics Symbol Parameter Conditions Value Unit Min. Typ. Max. gm32 Oscillator transconductance(1) 1. At power-on a high current biasing is applied for faster oscillation start-up. Once the oscillation is started, the current biasing is reduced to lower the power consumption of the system. Start-up 20 31 50 µA/V Normal run 8 17 30 VOSC32 Oscillation amplitude(2) 2. Not 100% tested, guaranteed by design characterization. Peak to peak 0.5 1.0 2.4 V VAV32 Oscillation voltage level (2) Sine wave middle 0.7 0.9 1.2 tSTUP32 Oscillator start-up time (2) Stable VDD –15 s CA CA crystal ST10F273Z4 |
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