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STM32F779IGH7 Datasheet(PDF) 145 Page - STMicroelectronics |
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STM32F779IGH7 Datasheet(HTML) 145 Page - STMicroelectronics |
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145 / 255 page  DocID028294 Rev 4 145/255 STM32F777xx STM32F778Ax STM32F779xx Electrical characteristics 224 5.3.10 Internal clock source characteristics The parameters given in Table 45 and Table 46 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 17. High-speed internal (HSI) RC oscillator Figure 32. ACCHSI versus temperature 1. Guaranteed by characterization results. Table 45. HSI oscillator characteristics (1) 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHSI HSI user trimming step(2) 2. Guaranteed by design. -- - 1 % Accuracy of the HSI oscillator TA = –40 to 105 °C(3) 3. Guaranteed by characterization results. 8 - 4.5 % TA = –10 to 85 °C(3) 4- 4 % TA = 25 °C(4) 4. Factory calibrated, parts not soldered. 1- 1 % tsu(HSI)(2) HSI oscillator startup time - - 2.2 4 μs IDD(HSI)(2) HSI oscillator power consumption - - 60 80 μA |
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