| Manufacturer | Part # | Datasheet | Description |
 Inchange Semiconductor ... |
APT1001R2AN
|
309Kb/2P |
isc N-Channel MOSFET Transistor
|
|
APT1001R2BN
|
359Kb/2P |
isc N-Channel MOSFET Transistor
|
|
APT1001R2HN
|
360Kb/2P |
isc N-Channel MOSFET Transistor
|
|
APT1001R3AN
|
309Kb/2P |
isc N-Channel MOSFET Transistor
|
 Advanced Power Technolo... |
APT1001R3BN
|
52Kb/4P |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
 Inchange Semiconductor ... |
APT1001R3BN
|
359Kb/2P |
isc N-Channel MOSFET Transistor
|
|
APT1001R3HN
|
297Kb/2P |
isc N-Channel MOSFET Transistor
|
 Advanced Power Technolo... |
APT1001R6BFLL
|
153Kb/5P |
POWER MOS 7 R FREDFET
|
 Inchange Semiconductor ... |
APT1001R6BFLL
|
372Kb/2P |
isc N-Channel MOSFET Transistor
|
 Advanced Power Technolo... |
APT1001R6BFLLG
|
375Kb/5P |
POWER MOS 7 R FREDFET
|
|
APT1001R6BN
|
50Kb/4P |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
|
APT1001R6SFLL
|
153Kb/5P |
POWER MOS 7 R FREDFET
|
 Inchange Semiconductor ... |
APT1001RAN
|
309Kb/2P |
isc N-Channel MOSFET Transistor
|
 Advanced Power Technolo... |
APT1001RBLC
|
35Kb/2P |
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
|
|
APT1001RBN
|
50Kb/4P |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
 Inchange Semiconductor ... |
APT1001RBN
|
359Kb/2P |
isc N-Channel MOSFET Transistor
|
|
APT1001RBNR
|
371Kb/2P |
isc N-Channel MOSFET Transistor
|
 Advanced Power Technolo... |
APT1001RBVFR
|
123Kb/4P |
POWER MOS V FREDFET
|
 Inchange Semiconductor ... |
APT1001RBVFR
|
371Kb/2P |
isc N-Channel MOSFET Transistor
|
 Advanced Power Technolo... |
APT1001RBVR
|
68Kb/4P |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|