| Manufacturer | Part # | Datasheet | Description |
Semikron International |
P1000S
|
352Kb/2P |
Standard silicon rectifier diodes
|
|
P1000S
|
571Kb/2P |
Standard silicon rectifier diodes
|
Diotec Semiconductor |
P1000S
|
139Kb/2P |
Standard Recovery Rectifier Diodes
|
Toshiba Semiconductor |
P1001A
|
414Kb/9P |
THSHIBA PHOTOINTERRUPTER INFRARED LED+PHOTO IC
|
Littelfuse |
P1001DF-1
|
176Kb/4P |
The series provides single port protection using a fixed voltage switching device
|
|
P1001DF-1E
|
206Kb/4P |
The series provides single port protection using a fixed Series are SIDACtor짰 devices
|
|
P1001DF-1E
|
206Kb/4P |
Fixed Voltage Enhanced Single Port Series
|
Wuxi U-NIKC Semiconduct... |
P1003EK
|
524Kb/6P |
P-Channel Logic Level Enhancement Mode MOSFET
|
|
P1003EVG
|
376Kb/5P |
P-Channel Enhancement Mode MOSFET
|
VBsemi Electronics Co.,... |
P1003EVG
|
996Kb/9P |
P-Channel 30-V (D-S) MOSFET
|
Littelfuse |
P1004-95
|
388Kb/2P |
Time Delay Relays / DELAY-ON-MAKE
2021 Rev: 1-B-030121 |
|
P1004-95-X
|
388Kb/2P |
Time Delay Relays / DELAY-ON-MAKE
2021 Rev: 1-B-030121 |
DB Unlimited. |
P10045-1
|
548Kb/1P |
Released from Engineering
|
Wuxi U-NIKC Semiconduct... |
P1004BD
|
567Kb/6P |
N-Channel Enhancement Mode MOSFET
|
VBsemi Electronics Co.,... |
P1004BDG
|
1,001Kb/8P |
N-Channel 4 -V (D-S) MOSFET
|
|
P1004BS
|
1Mb/9P |
N-Channel 40 V (D-S) MOSFET
|
|
P1004HV
|
1,004Kb/9P |
Dual N-Channel 40-V (D-S) MOSFET
|
Vishay Siliconix |
P1005
|
131Kb/10P |
High Precision Wraparound - Wide Ohmic Value Range Thin Film Chip Resistors, Sulfur Resistant
20-Feb-15 |
DB Unlimited. |
P10080-1
|
555Kb/1P |
Released from Engineering
|
Hamamatsu Corporation |
P10090
|
72Kb/4P |
InAs photovoltaic detector
|
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