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  • M93C76-RMB7TG

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    ## Technical Overview of M93C76-RMB7TG The **M93C76-RMB7TG** is a low-voltage, high-reliability serial Electrically Erasable Programmable Read-Only Memory (EEPROM) manufactured by **STMicroelectronics**. It is widely used for non-volatile data storage in consumer, industrial, and automotive applications. --- ### 1. Key Technical Specifications | Parameter | Specification | | :--- | :--- | | **Memory Size** | 8 Kbit (organized as 1024 x 8-bit or 512 x 16-bit) | | **Interface** | MICROWIRE (3-Wire Serial) | | **Supply Voltage (Vcc)** | 1.8V to 5.5V | | **Clock Frequency** | 2 MHz | | **Package Type** | UFDFPN8 (Ultra-thin Fine pitch Dual Flat No-lead) | | **Operating Temperature** | -40°C to +85°C | | **Write Cycles** | More than 4 million cycles | | **Data Retention** | More than 200 years | --- ### 2. Pin Configuration and Functions The device typically comes in an 8-pin package. Below are the primary pin functions: 1. **S (Chip Select):** Activates the device when pulled High. 2. **D (Serial Data Input):** Used to transfer opcodes, addresses, and data into the device. 3. **Q (Serial Data Output):** Used to read data out of the device. 4. **C (Serial Clock):** Synchronizes the communication between the host and the memory. 5. **ORG (Organization Select):** Sets the memory architecture (x8 or x16 bits). 6. **Vcc/Vss:** Power supply and Ground. --- ### 3. Core Features * **User-Configurable Organization:** The `ORG` pin allows the user to choose between an 8-bit or 16-bit data bus width, providing flexibility for different microcontroller architectures. * **Write Protection:** Includes a "Write Enable" instruction that must be sent before any data can be modified, preventing accidental data corruption. * **Low Power Consumption:** Optimized for battery-powered devices with low active and standby currents. * **Self-Timed Write Cycle:** The chip handles the internal timing for erasing and writing data, freeing up the host processor. --- ### 4. Part Number Breakdown The suffix **RMB7TG** provides specific manufacturing details: * **R:** Supply voltage range (1.8V to 5.5V). * **MB:** Package code for UFDFPN8 (2x3 mm). * **7:** Device grade (Industrial temperature range -40 to +85°C). * **TG:** Tape and Reel packing with "Green" (RoHS compliant) materials. ---
    ✨ Follow-up Questions
    • ⤷ How does the ORG pin change the memory structure in this EEPROM?
    • ⤷ What is the difference between MICROWIRE and SPI interfaces in EEPROMs?
    • ⤷ Can this specific part be used in automotive safety-critical systems?