Device: 2SA733

Type: PNP Bipolar Junction Transistor (BJT)

Key Characteristics:

️· Voltage Ratings:
- Collector-Base Voltage (VCBO): -60V
- Collector-Emitter Voltage (VCEO): -50V
- Emitter-Base Voltage (VEBO): -5V
️· Current Ratings:
- Continuous Collector Current (IC): -150mA
- Power Dissipation (Pc): 200mW
️· Temperature:
- Junction Temperature (TJ): +150°C
- Storage Temperature Range (TSTG): -55°C to +150°C

Electrical Characteristics (Typical Values/Ranges - see datasheet for test conditions):

️· Saturation Parameters:
- VCE(sat): -0.18V to -0.30V (at IC = -100mA, IB = -10mA)
- VBE(on): -0.58V to -0.68V (at VCE = -6V, IC = -1mA)
️· Gain:
- hFE (DC Current Gain): 120-475 (VCE = -6V, IC = -1mA) - Classified into ranks (L: 120-220, H: 220-475) with marking "CS".
️· Frequency:
- Transition Frequency (fT): 50 MHz (VCE = -6V, IC = -10mA)
️· Capacitance:
- Collector-Base Capacitance (Cob): 4.5 - 7 pF (VCB = -10V, f = 1 MHz)
️· Leakage Current:
- ICBO: ≤ -100 nA (VCB = -60V, IE = 0)
- IEBO: ≤ -100 nA (VEB = -5V, IC = 0)
️· Noise Figure:
- NF: 6-20 dB (VCE = -6V, IC = -0.3mA, Rg = 10 kΩ, f = 100 Hz)

Package: SOT-23

Important Notes:

️· The 'hFE' value is categorized into two ranks (L and H) with a marking of "CS" on the package.
️· All values are based on specific test conditions, so refer to the full datasheet for precise details.