# CS18B/CS18D/CS18M/CS18N Silicon Controlled Rectifier

## Description
️· Hermetically sealed silicon controlled rectifiers.
️· Designed for control systems and sensing circuit applications.
️· TO-18 case.
️· Marking: Full part number.

## Maximum Ratings
️· Peak Repetitive Off-State Voltage (VDRM, VRRM): 200V (CS18B), 400V (CS18D), 600V (CS18M), 800V (CS18N)
️· RMS On-State Current (IT(RMS)): 1.0A
️· Non-Repetitive On-State Current (ITSM): 10A
️· Fusing Current (I2t): 0.24A (CS18B), 2s
️· Peak Gate Current (IGM): 1.0A
️· Peak Gate Dissipation (PGM): 2.0W
️· Gate Dissipation (PG(AV)): 0.1W
️· Operating Junction Temperature (TJ): -40 to +125 °C
️· Storage Temperature (TSTG): -40 to +150 °C
️· Thermal Resistance (JC): 32 °C/W
️· Thermal Resistance (JA): 200 °C/W

## Electrical Characteristics
️· Leakage Current (IDRM, IRRM): 1.0 μA (rated VDRM, VRRM, RGK=1.0KΩ), 0.1 mA (TC=125°C)
️· Voltage, Threshold (VTM): 1.6 to 1.6V (IT=2.0A)
️· Gate Trigger Current (IGT): 20-200 μA (VD=12V, RL=10Ω)
️· Gate Voltage (VGT): 0.65 to 0.8V (VD=12V, RL=10Ω)
️· Holding Current (IH): 0.5 to 5.0 mA (RGK=1.0KΩ)
️· dv/dt: 25 V/μs (VD=0.67V x VDRM, RGK=1.0KΩ, TC=125°C)

## Mechanical Outline
️· TO-18 case
️· Lead Code:
1. Cathode
2. Gate
3. Anode