1. Product Overview & Features:

️· Type: NPN Bipolar RF Transistor
️· Purpose: Driver amplifier for RF frontends (up to 3 GHz), transmitter drivers, and active antenna LNA applications.
️· Technology: Based on Infineon's 25 GHz silicon bipolar technology.
️· Linearity: High linearity (OP1dB = 19 dBm, OIP3 = 31 dBm)
️· Gain: Maximum available gain (Gma) of 15.5 dB.
️· Noise Performance: Low noise figure (NFmin = 1.7 dB)
️· Package: SOT343 (Visible leads)
️· Compliance: RoHS compliant, Halogen-Free.
️· AEC-Q101 Qualified: Automotive qualified.

2. Key Electrical Characteristics (with typical values):

️· Collector Emitter Breakdown Voltage (VCEO): 4.5-5 V
️· Transition Frequency (fT): 24 GHz (at VCE = 3V, IC = 90mA, f = 1GHz)
️· Collector Base Capacitance (CBC): 0.48 - 0.8 pF
️· Collector Emitter Capacitance (CCE): 1.2 pF
️· Emitter Base Capacitance (CEB): 1.7 pF
️· DC Current Gain (hFE): 60-130 (depending on test conditions - VCE and IC)

3. Absolute Maximum Ratings:

️· Collector-Emitter Voltage (VCEO): 4.5 V (open base) and 4.1V (-55°C)
️· Collector-Emitter Leakage Current (ICES): < 11 nA.
️· Collector Base Leakage Current (ICBO): <30 nA.
️· Emitter Base Leakage Current (IEBO): <31 μA.
️· Collector Current (IC): 170 mA.
️· Base Current (IB): 10 mA
️· Total Power Dissipation (Ptot): 500 mW (with a specific condition for the soldering point temperature)
️· Junction Temperature (Tj): 150 °C
️· Storage Temperature (Tstg): -55 to 150 °C

4. Thermal Characteristics:

️· Junction-Soldering Point Thermal Resistance (RthJS): 120 K/W.



Important Notes & Cautions:

️· ESD Sensitivity: The device is ESD sensitive and requires proper handling precautions.
️· Maximum Ratings: Exceeding maximum ratings can cause permanent damage.
️· Soldering Point Temperature: Be mindful of the soldering point temperature when calculating total power dissipation.
️· See Application Note AN077: For detailed information on thermal resistance calculations.

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