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BFP450 Datasheet(PDF) 8 Page - Infineon Technologies AG

Part # BFP450
Description  Linear Low Noise Silicon Bipolar RF Transistor
PDF  28 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP450 Datasheet(HTML) 8 Page - Infineon Technologies AG

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BFP450
Features
Datasheet
8
Revision 1.2, 2013-07-29
2
Features
Applications Examples
Driver amplifier
ISM bands 434 and 868 MHz
1.9 GHz cordless phones
CATV LNA
Transmitter driver amplifier
2.4 GHz WLAN and Bluetooth
Output stage LNA for active antennas
TV, GPS, SDARS, 2.4 GHz WLAN, etc
Suitable for 3 - 5.5 GHz oscillators
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Highly linear low noise driver amplifier for all RF frontends up to
3 GHz
Based on Infineon´s reliable high volume 25 GHz silicon bipolar
technology
Output compression point OP1dB = 19 dBm
at 90 mA, 3 V, 1.9 GHz, 50 Ω system
Output 3rd order intermodulation point OIP3 = 31 dBm
at 90 mA, 3 V, 1.9 GHz, 50 Ω system
Maximum available gain Gma = 15.5 dB at 50 mA, 3 V, 1.9 GHz
Minimum noise figure NFmin = 1.7 dB at 50 mA, 3 V, 1.9 GHz
Pb-free (RoHS compliant) and halogen-free package with
visible leads
Qualification report according to AEC-Q101 available
Product Name
Package
Pin Configuration
Marking
BFP450
SOT343
1 = B
2 = E
3 = C
4 = E
ANs
1
2
3
4



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