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Hello, Please ask a question about BFR193F_13 Datasheet
# Example questions:
➢ What is the maximum collector-emitter voltage (vceo) specified for this transistor?
➢ What is the minimum junction temperature (tj) specified in the datasheet?
➢ What is the typical value for the transition frequency (ft) of this transistor?
| Part No. | BFR193F_13 |
| Manufacturer | INFINEON |
| Size | 542 Kbytes |
| Pages | 6 pages |
| Description | Low Noise Silicon Bipolar RF Transistor |
# BFR193F RF Transistor - Summary
This document summarizes key specifications for the BFR193F RF transistor.
General:
️· Type: NPN RF Transistor
️· Package: TSFP-3
️· Manufacturer: Infineon Technologies
Key Features:
️· Designed for RF applications.
Absolute Maximum Ratings:
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (Vceo) | 12 | V |
| Collector-Base Voltage (Vcbo) | 20 | V |
| Emitter-Base Voltage (Vebo) | 2 | V |
| Collector Current (Ic) | 80 | mA |
| Base Current (Ib) | 10 | mA |
| Total Power Dissipation (Pd) | 580 | mW |
| Junction Temperature (Tj) | 150 | °C |
| Storage Temperature (Tstg) | -55 to 150 | °C |
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | Vceo | 12 | V | ||
| Collector Cutoff Current | Ices | 100 | µA | ||
| Collector-Base Cutoff Current | Icbo | 100 | nA | ||
| Emitter-Base Cutoff Current | IEbo | 1 | µA | ||
| DC Current Gain | hFE | 70 | 100 | 140 | - |
| Transition Frequency | fT | 6 | 8 | - | GHz |
# BFR193F RF Transistor - Summary
This document summarizes key specifications for the BFR193F RF transistor.
General:
️· Type: NPN RF Transistor
️· Package: TSFP-3
️· Manufacturer: Infineon Technologies
Key Features:
️· Designed for RF applications.
Absolute Maximum Ratings:
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (Vceo) | 12 | V |
| Collector-Base Voltage (Vcbo) | 20 | V |
| Emitter-Base Voltage (Vebo) | 2 | V |
| Collector Current (Ic) | 80 | mA |
| Base Current (Ib) | 10 | mA |
| Total Power Dissipation (Pd) | 580 | mW |
| Junction Temperature (Tj) | 150 | °C |
| Storage Temperature (Tstg) | -55 to 150 | °C |
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | Vceo | 12 | V | ||
| Collector Cutoff Current | Ices | 100 | µA | ||
| Collector-Base Cutoff Current | Icbo | 100 | nA | ||
| Emitter-Base Cutoff Current | IEbo | 1 | µA | ||
| DC Current Gain | hFE | 70 | 100 | 140 | - |
| Transition Frequency | fT | 6 | 8 | - | GHz |
| Part No. | BFR193F_13 |
| Manufacturer | INFINEON |
| Size | 542 Kbytes |
| Pages | 6 pages |
| Description | Low Noise Silicon Bipolar RF Transistor |
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