BFR193F_13 datasheet(1/6 Pages) INFINEON

Part #	BFR193F

Description	Low Noise Silicon Bipolar RF Transistor

PDF	6 Pages

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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2013-11-07

1

BFR193F

3

1

2

Low Noise Silicon Bipolar RF Transistor

• For low noise, high-gain amplifiers up to 2 GHz

• For linear broadband amplifiers

• fT = 8 GHz, NFmin = 1 dB at 900 MHz

• Pb-free (RoHS compliant) and halogen-free product

• Qualification report according to AEC-Q101 available

ESD

(Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFR193F

RCs

1 = B

2 = E

3 = C

TSFP-3

Maximum Ratings

at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCEO

12

V

Collector-emitter voltage

VCES

20

Collector-base voltage

VCBO

20

Emitter-base voltage

VEBO

2

Collector current

IC

80

mA

Base current

IB

10

Total power dissipation1)

TS ≤ 72°C

Ptot

580

mW

Junction temperature

TJ

150

°C

Storage temperature

TStg

-55 ... 150

Thermal Resistance

Parameter

Symbol

Value

Unit

Junction - soldering point2)

RthJS

135

K/W

1TS is measured on the collector lead at the soldering point to the pcb

2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)

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