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30BQ015 Datasheet (PDF) - Microsemi Corporation

30BQ015 Datasheet PDF - Microsemi Corporation
Part # 30BQ015
Download  30BQ015 Download
File Size   101.85 Kbytes
Page   2 Pages
Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation
Description 3 AMP SCHOTTKY ORING RECTIFIER

30BQ015 Datasheet (PDF)

Go To PDF Page Download Datasheet
30BQ015 Datasheet PDF - Microsemi Corporation

Part # 30BQ015
Download  30BQ015 Click to download

File Size   101.85 Kbytes
Page   2 Pages
Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation
Description 3 AMP SCHOTTKY ORING RECTIFIER

30BQ015 Datasheet (HTML) - Microsemi Corporation


30BQ015 Product details

3 Amp Schottky ORing Rectifier

• Schottky Barrier Rectifier
• Vf @ 3A, 100°C = 0.22V
• 125°C Junction temperature
• Reverse Energy Tested




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About Microsemi Corporation


Microsemi Corporation was an American company that specialized in the design and manufacture of semiconductor and system solutions.
The company was founded in 1960 and was headquartered in Aliso Viejo, California.
Microsemi provided a wide range of products including analog and mixed-signal integrated circuits, field-programmable gate arrays (FPGAs), power management and control products, and other semiconductor solutions.
The company's products were used in various applications such as defense and security, aerospace and aviation, industrial, and communications.
Microsemi was known for its expertise in semiconductor technology and its ability to deliver high-quality and reliable products to its customers.
In 2018, Microsemi was acquired by Microchip Technology, a leading provider of microcontroller, mixed-signal, analog, and security products.
The Microsemi brand is no longer in use, but its technology and products continue to be a part of Microchip's portfolio.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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