RF Power MOSFET

♦  N-Channel Enhancement Mode

♦  Low Qgand Rg

♦  High dv/dt

♦  Nanosecond Switching

♦  50MHz Maximum Frequency

Features

•  Isolated Substrate

  −  high isolation voltage (>2500V)

  −  excellent thermal transfer

  −  Increased temperature and power cycling capability

•  IXYS advanced low Qgprocess

•  Low gate charge and capacitances

  −  easier to drive

  −  faster switching

•  Low RDS(on)

•  Very low insertion inductance (<2nH)

•  No beryllium oxide (BeO) or other haz ardous materials



Advantages

•  Optimized for RF and high speed switching at frequencies to 50MHz

•  Easy to mount—no insulators needed

•  High power density