| Manufacturer | Part # | Datasheet | Description |
Fairchild Semiconductor |
FQD6N50C
|
687Kb / 9P |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology
|
Stanson Technology |
STN4488L
|
644Kb / 7P |
STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
|
|
STN4822
|
516Kb / 6P |
STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
|
|
STN9926
|
648Kb / 7P |
The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
|
|
STN9926AA
|
233Kb / 7P |
The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
|
|
STP4931
|
334Kb / 6P |
STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
ACE Technology Co., LTD... |
ACE632
|
1Mb / 11P |
The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
VER 1.3 |
Fairchild Semiconductor |
FDPF10N60NZ
|
439Kb / 10P |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild?셲 proprietary, planar stripe, DMOS technology.
|
SHIKUES Electronics |
SDW3045
|
1,003Kb / 5P |
N-Channel enhancement mode power field effect transistors are using trench DMOS technology
|
Shanghai Leiditech Elec... |
LM6911
|
1Mb / 5P |
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology
|
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