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T34 Datasheet (PDF) - Vishay Siliconix

T34 Datasheet PDF - Vishay Siliconix
Part # T34
Download  T34 Download
File Size   104.04 Kbytes
Page   5 Pages
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix
Description Wet Tantalum High Performance HI-TMP® Capacitors for -55 °C to 200 °C Operation

T34 Datasheet (PDF)

Go To PDF Page Download Datasheet
T34 Datasheet PDF - Vishay Siliconix

Part # T34
Download  T34 Click to download

File Size   104.04 Kbytes
Page   5 Pages
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix
Description Wet Tantalum High Performance HI-TMP® Capacitors for -55 °C to 200 °C Operation

T34 Datasheet (HTML) - Vishay Siliconix


T34 Product details

• High capacitance, high performance (shock
and vibration)
• Hermetically sealed, tantalum case
• +200 °C high temperature
• Terminations: axial, standard tin / lead (SnPb)
• 100 % tin (RoHS-compliant) available
• Mounting: through-hole




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About Vishay Siliconix


Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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