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SISF20DN Datasheet (PDF) - Vishay Siliconix
SISF20DN Datasheet PDF - Vishay Siliconix
Part # SISF20DN
Download  SISF20DN Download
File Size   230.78 Kbytes
Page   9 Pages
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix
Description Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET

SISF20DN Datasheet (PDF)

Go To PDF Page Download Datasheet
SISF20DN Datasheet PDF - Vishay Siliconix

Part # SISF20DN
Download  SISF20DN Click to download

File Size   230.78 Kbytes
Page   9 Pages
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix
Description Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET

SISF20DN Datasheet (HTML) - Vishay Siliconix


SISF20DN Product details

• TrenchFET® Gen IV power MOSFET
• Very low source-to-source on resistance
• Integrated common-drain n-channel MOSFETs
in a compact and thermally enhanced package
• 100 % Rg and UIS tested
• Optimizes circuit layout for bi-directional current flow




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About Vishay Siliconix

Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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