General description
A 600 W LDMOS RF power transistor for transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Features and benefits
 Excellent ruggedness (VSWR  40 : 1 through all phases)
 Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
 High power gain
 High efficiency
 Designed for broadband operation (400 MHz to 1000 MHz)
 Internal input matching for high gain and optimum broadband operation
 Excellent reliability
 Easy power control
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Applications
 Communication transmitter applications
 Industrial applications