Description
The ACE11204A is the N-Channel enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology. This high-density process is especially tailored to
minimize on-state resistance and provide superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer power management and other battery
powered circuits where high-side switching, low in-line power loss and resistance to transients are
needed.

Features
⚫ 20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V
20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V
20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V
⚫ Super high-density cell design for extremely low RDS (ON)
⚫ Exceptional on-resistance and maximum DC current capability

Applications
⚫ Drivers: Relays/Solenoids/Lamps/Hammers
⚫ Power Supply Converter Circuits
⚫ Load/Power Switching Cell Phones, Pagers