Description
The ACE11205A is the P-Channel enhancement mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high-density process is especially tailored to minimize
on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power
management and other battery powered circuits where high-side switching, low in-line power loss, and
resistance to transients are needed.

Features
⚫ -20V/0.45A, RDS(ON)= 520mΩ@VGS=-4.5V
-20V/0.35A, RDS(ON)= 700mΩ@VGS=-2.5V
-20V/0.25A, RDS(ON)= 1500mΩ@VGS=-1.8V
⚫ Super high-density cell design for extremely low RDS (ON)
⚫ Exceptional on-resistance and maximum DC current capability

Application
⚫ Drivers: Relays/Solenoids/Lamps/Hammers
⚫ Power Supply Converter Circuits
⚫ Load/Power Switching Cell Phones, Pagers