ACE11205A

P-Channel Enhancement Mode MOSFET

VER 1.1

1

Description

The ACE11205A is the P-Channel enhancement mode power field effect transistors are produced using

high cell density, DMOS trench technology. This high-density process is especially tailored to minimize

on-state resistance and provide superior switching performance.

These devices are particularly suited for low voltage applications such as notebook computer power

management and other battery powered circuits where high-side switching, low in-line power loss, and

resistance to transients are needed.

Features

⚫

⚫

⚫

Exceptional on-resistance and maximum DC current capability

Application

⚫

Drivers: Relays/Solenoids/Lamps/Hammers

⚫

Power Supply Converter Circuits

⚫

Load/Power Switching Cell Phones, Pagers

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

-20

V

Gate-Source Voltage

±12

V

-1.0

A

-0.7

Pulsed Drain Current

-3

A

Continuous Source Current (Diode Conduction)

-0.6

A

Power Dissipation

0.35

W

0.19

Operating Junction Temperature

-55/150

O

C

Storage Temperature Range

-55/150

O

C

Thermal Resistance-Junction to Ambient

T

≤ 10sec

360

O

C /W

Steady State

400