WSBS8518 Datasheet(PDF) - Vishay Siliconix

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WSBS8518 Datasheet (PDF) - Vishay Siliconix

WSBS8518 Datasheet PDF - Vishay Siliconix


Part #	WSBS8518

Download	WSBS8518 Download

File Size	99.88 Kbytes

Page	3 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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Description

Power Metal Strip® Battery Shunt Resistor, Very Low Value

WSBS8518 Datasheet (PDF)

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WSBS8518 Datasheet PDF - Vishay Siliconix


Part #	WSBS8518

Download	WSBS8518 Click to download

File Size	99.88 Kbytes

Page	3 Pages

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

Description	Power Metal Strip® Battery Shunt Resistor, Very Low Value

WSBS8518 Datasheet (HTML) - Vishay Siliconix

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WSBS8518 Datasheet HTML 3Page - Vishay Siliconix

WSBS8518 Product details

FEATURES
• High power to resistor size ratio
• Proprietary processing technique produces
extremely low resistance values
• All welded construction
• Very low inductance (< 5 nH)
• Low thermal EMF (as low as < 1 μV/°C)
• AEC-Q200 qualified
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912

Similar Part No. - WSBS8518

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	WSBS8518	119Kb / 3P	Power Metal Strip® Battery Shunt Resistor, Very Low Value (100 µΩ and 125 µΩ) 01-Feb-08
	WSBS8518...14	116Kb / 3P	Power Metal Strip® Battery Shunt Resistor, Sn Plated, Very Low Value (50 μΩ , 100 μΩ , 125 μΩ , and 250 μΩ ) 15-Feb-17
	WSBS8518...60	108Kb / 3P	Power Metal Strip® Shunt Resistor With Two Sense Pins and Sn Plated Terminals, Very Low Value 22-Jun-2021
	WSBS8518...80	108Kb / 3P	Power Metal Strip® Shunt Resistor With Three Sense Pins,Sn Plated Terminals, Very Low Value 12-Mar-2021
	WSBS8518...P3	108Kb / 3P	Power Metal Strip® Battery Shunt Resistor With M3 Tapped Holes and Sn Plated Terminals, Very Low Value 26-Feb-2019

Similar Description - WSBS8518

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	WSBS8518	119Kb / 3P	Power Metal Strip® Battery Shunt Resistor, Very Low Value (100 µΩ and 125 µΩ) 01-Feb-08
	WSMS2908	85Kb / 3P	Power Metal Strip® Meter Shunt Resistor, Very Low Value (down to 0.0001 Ω) 02-Jul-10
	WSBM8518	122Kb / 4P	Power Metal Strip® Battery Shunt Resistor W/Molded Enclosure Very Low Value (100 μOhm) 26-Sep-12
	WSMS3124	86Kb / 3P	Power Metal Strip® Meter Shunt Resistor Very Low Value (down to 0.0001 Ω) 09-Mar-12
	WSBS8518	89Kb / 3P	Power Metal Strip® Battery Shunt Resistor, Very Low Value (100 μΩ, 125 μΩ, and 250 μΩ) 02-Jul-10
	WSBS8536L1000JT14	106Kb / 3P	Power Metal Strip® Battery Shunt Resistor Very Low Value (25 μΩ, 50 μΩ, 100 μΩ, and 125 μΩ) 01-Apr-2021
	WSBS8536	105Kb / 3P	Power Metal Strip® Battery Shunt Resistor Very Low Value (Down to 25 μΩ) 01-Apr-2021
	WSBS521614	90Kb / 3P	Power Metal Strip® Battery Shunt Resistor, Very Low Value (100 μΩ), Sn Plated 02-Jun-2021
	WSBS5216...14	94Kb / 3P	Power Metal Strip® Battery Shunt Resistor, Very Low Value (100 μΩ), Sn Plated 14-Oct-2021
	WSBS5216	93Kb / 3P	Power Metal Strip® Battery Shunt Resistor, Very Low Value (100 μΩ) 14-Oct-2021

About Vishay Siliconix

Vishay Siliconix is a subsidiary of Vishay Intertechnology, a global manufacturer of passive electronic components.
Vishay Siliconix specializes in the design, manufacturing, and marketing of power MOSFETs, IGBTs, and other power semiconductors.
The company was founded in 1962 and is headquartered in Santa Clara, California.
Vishay Siliconix provides power solutions for a variety of applications, including renewable energy systems, industrial equipment, computing and telecommunications, and automotive electronics.
The company's products are designed for high efficiency, low power consumption, and high reliability, and are manufactured in state-of-the-art facilities using advanced fabrication processes.
With a focus on innovation and customer satisfaction, Vishay Siliconix is committed to providing its customers with the best power management solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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