These devices employ the Schottky Barrier principle in a
metal−to−silicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.

Features
• Compact Package with J−Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guardring for Over−Voltage Protection
• Low Forward Voltage Drop
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
• These Devices are Pb−Free and are RoHS Compliant

Mechanical Characteristics
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 95 mg (approximately)
• Cathode Polarity Band
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Available in 12 mm Tape, 2500 Units per 13 in Reel, Add “T3”
Suffix to Part Number
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B