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TPD7106F Datasheet (PDF) - Toshiba Semiconductor

TPD7106F Datasheet PDF - Toshiba Semiconductor
Part # TPD7106F
Download  TPD7106F Download
File Size   635.2 Kbytes
Page   22 Pages
Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Description TOSHIBA Intelligent Power Device Silicon Power MOS Integrated Circuit

TPD7106F Datasheet (PDF)

Go To PDF Page Download Datasheet
TPD7106F Datasheet PDF - Toshiba Semiconductor

Part # TPD7106F
Download  TPD7106F Click to download

File Size   635.2 Kbytes
Page   22 Pages
Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Description TOSHIBA Intelligent Power Device Silicon Power MOS Integrated Circuit

TPD7106F Datasheet (HTML) - Toshiba Semiconductor


TPD7106F Product details

1 channel High-Side N channel Power MOSFET Gate Driver
1. Description
TPD7106F is a 1channel high-side N channel power MOSFET gate driver. This IC contains a charge pump circuit, allowing easy configuration of a high-side switch for large-current applications.
2. Applications
● Junction Boxes for Automotive.
● Power distribution modules for Automotive.
● Semiconductor relays.
3. Features
● AEC-Q100 qualified.
● Built in the charge pump circuit (Charge pump capacitor is external).
● Output current is -10mA / +400mA, and the drive by parallel use of N channel power MOSFET is possible.
● Built in the protection for reverse connection of power supply.
● Built in the diagnosis output for under voltage of Charge pump circuit.
● SSOP16 package for surface mounting.




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