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2SD1581 Datasheet (PDF) - Renesas Technology Corp

2SD1581 Datasheet PDF - Renesas Technology Corp
Part # 2SD1581
Download  2SD1581 Download
File Size   228.14 Kbytes
Page   6 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description SILICON TRANSISTOR

2SD1581 Datasheet (PDF)

Go To PDF Page Download Datasheet
2SD1581 Datasheet PDF - Renesas Technology Corp

Part # 2SD1581
Download  2SD1581 Click to download

File Size   228.14 Kbytes
Page   6 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description SILICON TRANSISTOR

2SD1581 Datasheet (HTML) - Renesas Technology Corp


2SD1581 Product details

NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS

The 2SD1581 is a single type super high hFE transistor and low
collector saturation voltage and low power loss. This transistor is
ideal for use in high current drives such as mortars, relays, and
ramps.

FEATURES
• Ultra high hFE
hFE = 800 to 3200 (@ VCE = 5.0 V, IC = 500 mA)
• Low collector saturation voltage
VCE(sat) = 0.18 V TYP. (@ IC = 1.0 A, IB = 10 mA)




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About Renesas Technology Corp


Renesas Technology Corp is a Japanese semiconductor company that provides a wide range of microcontrollers, system-on-chips, and analog and power devices for various applications in the automotive, industrial, and consumer markets.
The company was formed in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation.
Renesas is one of the largest microcontroller suppliers in the world and is known for its expertise in the development of advanced technologies in areas such as the Internet of Things (IoT), artificial intelligence (AI), and automotive electronics.
The company has operations in over 20 countries and its products are used in a wide range of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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