N--Channel Enhancement--Mode Lateral MOSFET
This 50 watt RF power LDMOS transistor is designed for cellular base station
applications covering the frequency range of 1805 to 1880 MHz.
 Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQ = 1800 mA, Pout = 50 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.

Features
 Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
 Designed for Digital Predistortion Error Correction Systems
 Optimized for Doherty Applications
 In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel.
For R5 Tape and Reel option, see p. 12.