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3SK255 Datasheet (PDF) - Renesas Technology Corp

3SK255 Datasheet PDF - Renesas Technology Corp
Part # 3SK255
Download  3SK255 Download
File Size   259.83 Kbytes
Page   10 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description MOS FIELD EFFECT TRANSISTOR

3SK255 Datasheet (PDF)

Go To PDF Page Download Datasheet
3SK255 Datasheet PDF - Renesas Technology Corp

Part # 3SK255
Download  3SK255 Click to download

File Size   259.83 Kbytes
Page   10 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description MOS FIELD EFFECT TRANSISTOR

3SK255 Datasheet (HTML) - Renesas Technology Corp


3SK255 Product details

RF AMPLIFIER FOR UHF TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS SUPER MINI MOLD

FEATURES
• Low VDD Use : (VDS = 3.5 V)
• Driving Battery
• Low Noise Figure : NF = 1.8 dB TYP. (f = 900 MHz)
• High Power Gain : GPS = 18.0 dB TYP. (f = 900 MHz)
• Suitable for uses as RF amplifier in UHF TV tuner.
• Automatically Mounting : Embossed Type Taping
• Small Package : 4 Pins Super Mini Mold




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About Renesas Technology Corp


Renesas Technology Corp is a Japanese semiconductor company that provides a wide range of microcontrollers, system-on-chips, and analog and power devices for various applications in the automotive, industrial, and consumer markets.
The company was formed in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation.
Renesas is one of the largest microcontroller suppliers in the world and is known for its expertise in the development of advanced technologies in areas such as the Internet of Things (IoT), artificial intelligence (AI), and automotive electronics.
The company has operations in over 20 countries and its products are used in a wide range of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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