Features
 Reverse conducting IGBT with monolithic diode
 Short circuit withstand time (5 s typ.)
 Low collector to emitter saturation voltage
VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)
 Built-in fast recovery diode (trr = 130 ns typ.) in one package
 Trench gate and thin wafer technology
 High speed switching
tf = 45 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 10 A, Rg = 5 , Ta = 25°C, inductive load)