K-BAND MEDIUM POWER AMPLIFIE
N-CHANNEL HJ-FET CHIPS

DESCRIPTION
The NE1280 series is medium power HJ-FET chips
which offer high output power and high gain for telecom
transmit power amplifier applications to 30 GHz.
NE1280100 is one cell die of 450 mm gate width,
offering 0.1 W output power. NE1280200 is two cells of
900 mm gate width, offering 0.2 W output power.
NE1280400 is four cells of 1.8 mm gate width, offering
0.4 W output power.
The devices incorporate WSi/Au gate to get high gain
and silicon nitride glassivation for superior scratch resistance
and mechanical protection.
Via hole source grounding result in superior RF
performance. To reduce the thermal resistance, the
devices have a PHS. (Plated Heat Sink)
NEC’s strigent quality assurance and test procedures
assure the highest reliability and performance.


FEATURES
• Class A operation
• High power output
• High liniar gain
• High reliability